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A-DATA Technology DQVE1908 512MB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
比较
A-DATA Technology DQVE1908 512MB vs Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
总分
A-DATA Technology DQVE1908 512MB
总分
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology DQVE1908 512MB
报告一个错误
更快的读取速度,GB/s
2
18.1
测试中的平均数值
需要考虑的原因
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
报告一个错误
低于PassMark测试中的延时,ns
28
66
左右 -136% 更低的延时
更快的写入速度,GB/s
14.8
1,557.9
测试中的平均数值
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
A-DATA Technology DQVE1908 512MB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
66
28
读取速度,GB/s
2,775.5
18.1
写入速度,GB/s
1,557.9
14.8
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
382
3564
A-DATA Technology DQVE1908 512MB RAM的比较
Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB RAM的比较
G Skill Intl F3-10600CL9-2GBNT 2GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
AMD R5S38G1601U2S 8GB
Crucial Technology BLS8G4D240FSA.16FBD 8GB
AMD AE34G2139U2 4GB
A-DATA Technology DDR4 3000 2OZ 8GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMU32GX4M4C3200C16 8GB
Kingston KVR16N11/8-SP 8GB
Corsair CM4X4GF2400C16S2 4GB
Samsung M471B5773DH0-CK0 2GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology CT16G4SFD8266.C16FN 16GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Micron Technology M471A1K43CB1-CTD 8GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3600C19-16GSXWB 16GB
Kingston HP536727-H41-ELD 4GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
Kingston 9965525-140.A00LF 8GB
Mushkin MRA4S293MMMF32G 32GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Patriot Memory (PDP Systems) PSD416G26662S 16GB
takeMS International AG TMS2GB264D083805EV 2GB
Crucial Technology BLS8G4D240FSBK.8FBD 8GB
Samsung M3 78T2863EHS-CF7 1GB
Kingmax Semiconductor GSJF62F-DA---------- 4GB
报告一个错误
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Bug description
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