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A-DATA Technology DQVE1908 512MB
DSL Memory D4SS1G082SH21A-B 16GB

A-DATA Technology DQVE1908 512MB vs DSL Memory D4SS1G082SH21A-B 16GB

总分
star star star star star
A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分
star star star star star
DSL Memory D4SS1G082SH21A-B 16GB

DSL Memory D4SS1G082SH21A-B 16GB

差异 规格 评论

差异

A-DATA Technology DQVE1908 512MB 需要考虑的原因
A-DATA Technology DQVE1908 512MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 13.4
    测试中的平均数值
DSL Memory D4SS1G082SH21A-B 16GB 需要考虑的原因
DSL Memory D4SS1G082SH21A-B 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 66
    左右 -120% 更低的延时
  • 更快的写入速度，GB/s
    6.9 left arrow 1,557.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQVE1908 512MB
DSL Memory D4SS1G082SH21A-B 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    66 left arrow 30
  • 读取速度，GB/s
    2,775.5 left arrow 13.4
  • 写入速度，GB/s
    1,557.9 left arrow 6.9
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    382 left arrow 2081

A-DATA Technology DQVE1908 512MB RAM的比较

Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB

DSL Memory D4SS1G082SH21A-B 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology DOVF1B163G2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Corsair CMW64GX4M4K3600C18 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
DSL Memory D4SS1G082SH21A-B 16GB
DSL Memory D4SS1G082SH21A-B 16GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Micron Technology 16ATF4G64AZ-3G2E1 32GB
Micron Technology 16ATF4G64AZ-3G2E1 32GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
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Kingston KHX3200C16D4/4GX 4GB
内存RAM
Corsair CML8GX3M2A1866C9 4GB
Corsair CML8GX3M2A1866C9 4GB
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Kingston 99U5663-003.A00G 16GB
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PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
SK Hynix HMA42GR7AFR4N-UH 16GB
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TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
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Crucial Technology CT16G4DFD832A.M16FR 16GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
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Essencore Limited IM4AGU88N26-GIIHMB 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
G Skill Intl F4-3300C16-8GTZKW 8GB
G Skill Intl F4-3300C16-8GTZKW 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Kingston KF3200C20S4/16G 16GB
Kingston KF3200C20S4/16G 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3000C15-4GRBB 4GB
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内存RAM
A-DATA Technology VDQVE1B16 2GB
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Transcend Information JM3200HLE-16G 16GB
内存RAM
Crucial Technology CT2K102464BD160B 8GB
Crucial Technology CT2K102464BD160B 8GB
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G Skill Intl F4-3000C16-16GTRS 16GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Kingston KHX2933C17S4/8G 8GB
Kingston KHX2933C17S4/8G 8GB
内存RAM