A-DATA Technology DQVE1908 512MB vs InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

更快的读取速度，GB/s

2 18

测试中的平均数值

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

需要考虑的原因
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 66

左右 -144% 更低的延时
更快的写入速度，GB/s

15.1 1,557.9

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 27
读取速度，GB/s

2,775.5 18.0
写入速度，GB/s

1,557.9 15.1
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

382 3711

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

Kingston ACR16D3LS1KNG/8G 8GB

Kingston ACR16D3LS1KNG/8G 8GB

Asgard VMA42UG-MEC1U2AW1 8GB

Asgard VMA42UG-MEC1U2AW1 8GB

Kingston 99U5474-022.A00LF 2GB

Kingston 99U5474-022.A00LF 2GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB

Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Kingston 9905744-024.A00G 16GB

Kingston 9905744-024.A00G 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CMU64GX4M4A2666C16 16GB

Corsair CMU64GX4M4A2666C16 16GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Patriot Memory (PDP Systems) 4000 C20 Series 8GB

Patriot Memory (PDP Systems) 4000 C20 Series 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Crucial Technology CT8G4DFS8213.M8FB 8GB

Crucial Technology CT8G4DFS8213.M8FB 8GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Asgard VMA42UG-MEC1U2AW1 8GB

Asgard VMA42UG-MEC1U2AW1 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-2800C15-4GTZB 4GB

G Skill Intl F4-2800C15-4GTZB 4GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology AO1E34RCTV2-BZWS 32GB

A-DATA Technology AO1E34RCTV2-BZWS 32GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

G Skill Intl F4-3200C16-16GIS 16GB

G Skill Intl F4-3200C16-16GIS 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Corsair CMD16GX4M4B3600C18 4GB

Corsair CMD16GX4M4B3600C18 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3600C16-8GTRGC 8GB

G Skill Intl F4-3600C16-8GTRGC 8GB