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A-DATA Technology DQVE1B16 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
比较
A-DATA Technology DQVE1B16 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
总分
A-DATA Technology DQVE1B16 2GB
总分
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology DQVE1B16 2GB
报告一个错误
更快的读取速度,GB/s
4
20.4
测试中的平均数值
更快的写入速度,GB/s
2,285.0
18.1
测试中的平均数值
需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
报告一个错误
低于PassMark测试中的延时,ns
18
68
左右 -278% 更低的延时
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
A-DATA Technology DQVE1B16 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
68
18
读取速度,GB/s
4,165.3
20.4
写入速度,GB/s
2,285.0
18.1
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
784
3529
A-DATA Technology DQVE1B16 2GB RAM的比较
Samsung M378T5663DZ3-CF7 2GB
Corsair CMD8GX4M2B3466C18 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905458-017.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston HP669238-071-HYC 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3200C16-4GRK 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Kingston 9905678-028.A00G 8GB
Kingston ACR256X64D3S1333C9 2GB
Apacer Technology 78.B1GM3.C7W0B 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Corsair CMW64GX4M4Z2933C16 16GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
G Skill Intl F4-3600C17-4GVK 4GB
Samsung M393B1K70QB0-CK0 8GB
Micron Technology 18ASF2G72PDZ-2G6D1 16GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Qimonda 64T128020EDL2.5C2 1GB
Crucial Technology CT8G4SFD8213.C16FDD2 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Team Group Inc. DDR4 3600 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
G Skill Intl F4-4000C16-16GTRSA 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Micron Technology 72ASS8G72LZ-2G3B2 64GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology BLS8G4S26BFSDK.8FD 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Essencore Limited KD48GU481-26N1600 8GB
报告一个错误
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