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A-DATA Technology VDQVE1B16 2GB
Apacer Technology 76.D305G.D060B 16GB

A-DATA Technology VDQVE1B16 2GB vs Apacer Technology 76.D305G.D060B 16GB

总分
star star star star star
A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分
star star star star star
Apacer Technology 76.D305G.D060B 16GB

Apacer Technology 76.D305G.D060B 16GB

差异 规格 评论

差异

A-DATA Technology VDQVE1B16 2GB 需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,061.2 left arrow 13.4
    测试中的平均数值
Apacer Technology 76.D305G.D060B 16GB 需要考虑的原因
Apacer Technology 76.D305G.D060B 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 46
    左右 -39% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
Apacer Technology 76.D305G.D060B 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 33
  • 读取速度，GB/s
    4,937.3 left arrow 16.6
  • 写入速度，GB/s
    2,061.2 left arrow 13.4
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    759 left arrow 3089

A-DATA Technology VDQVE1B16 2GB RAM的比较

takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB

Apacer Technology 76.D305G.D060B 16GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905713-004.A00G 4GB
Kingston 9905713-004.A00G 4GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Apacer Technology 76.D305G.D060B 16GB
Apacer Technology 76.D305G.D060B 16GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Panram International Corporation W4N2666PS-16G 16GB
Panram International Corporation W4N2666PS-16G 16GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Kingston KHX2133C13S4/8G 8GB
Kingston KHX2133C13S4/8G 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston 9965600-027.A01G 16GB
Kingston 9965600-027.A01G 16GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
Kingston 99U5704-001.A00G 4GB
Kingston 99U5704-001.A00G 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-4133C19-8GTZC 8GB
G Skill Intl F4-4133C19-8GTZC 8GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
G Skill Intl F4-4400C18-8GTZR 8GB
G Skill Intl F4-4400C18-8GTZR 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Teikon TMA81GU6AFR8N-UHSC 8GB
Teikon TMA81GU6AFR8N-UHSC 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
内存RAM
Kingston 9905471-076.A00LF 8GB
Kingston 9905471-076.A00LF 8GB
AMD R748G2133U2S-UO 8GB
AMD R748G2133U2S-UO 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-3200C16-16GVK 16GB
G Skill Intl F4-3200C16-16GVK 16GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB
Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Kingston 99U5663-006.A00G 16GB
Kingston 99U5663-006.A00G 16GB
内存RAM