A-DATA Technology VDQVE1B16 2GB vs Corsair CMD16GX4M4B2133C10 4GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

Corsair CMD16GX4M4B2133C10 4GB

Corsair CMD16GX4M4B2133C10 4GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

更快的读取速度，GB/s

4 15.8

测试中的平均数值
更快的写入速度，GB/s

2,061.2 11.7

测试中的平均数值

Corsair CMD16GX4M4B2133C10 4GB

需要考虑的原因
Corsair CMD16GX4M4B2133C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 46

左右 -92% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

Corsair CMD16GX4M4B2133C10 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 24
读取速度，GB/s

4,937.3 15.8
写入速度，GB/s

2,061.2 11.7
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

759 2971

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905625-142.A00G 16GB

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V-GEN D4M8GL26A8TS6 8GB

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Chun Well Technology Holding Limited MD4U1636181DCW 16GB

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Samsung M393B2G70BH0-CK0 16GB

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G Skill Intl F4-3200C15-16GTZSW 16GB

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Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

Kingston 9905701-029.A00G 16GB

Kingston 9905701-029.A00G 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

SK Hynix HMA84GR7MFR4N-UH 32GB

SK Hynix HMA84GR7MFR4N-UH 32GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Micron Technology 72ASS8G72LZ-2G3B2 64GB

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Kingston MSI16D3LS1MNG/8G 8GB

Kingston MSI16D3LS1MNG/8G 8GB

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Kingston XRMWRN-HYA 16GB