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A-DATA Technology VDQVE1B16 2GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
比较
A-DATA Technology VDQVE1B16 2GB vs Crucial Technology BLS4G4D240FSE.M8FADM 4GB
总分
A-DATA Technology VDQVE1B16 2GB
总分
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
更快的读取速度,GB/s
4
15.5
测试中的平均数值
更快的写入速度,GB/s
2,061.2
11.0
测试中的平均数值
需要考虑的原因
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
报告一个错误
低于PassMark测试中的延时,ns
24
46
左右 -92% 更低的延时
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
24
读取速度,GB/s
4,937.3
15.5
写入速度,GB/s
2,061.2
11.0
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
759
2445
A-DATA Technology VDQVE1B16 2GB RAM的比较
takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B1K70CH0-CH9 8GB
Micron Technology 16ATF2G64HZ-2G3B2 16GB
takeMS International AG TMS2GB264D082-805G 2GB
Nanya Technology M471A5143EB1-CRC 4GB
SK Hynix HMA82GS6DJR8N-XN 16GB
Samsung M471A2K43CB1-CTD 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C16-8GTZRC 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Crucial Technology BLS16G4D26BFSB.16FD 16GB
Samsung M471B5173QH0-YK0 4GB
Kingston KHX3000C15D4/8GX 8GB
Avant Technology F641GU67F9333G 8GB
Kingston 9905630-031.A00G 16GB
Samsung M471B5773DH0-CH9 2GB
Kingston 9905678-033.A00G 4GB
TwinMOS 8DPT5MK8-TATP 2GB
Samsung M471A5244CB0-CTD 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-4400C16-8GTZR 8GB
Kingston KVR533D2N4 512MB
A-DATA Technology AO2P24HC8T1-BTBS 8GB
Elpida EBJ21UE8BDS0-DJ-F 2GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingston 9905469-143.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N
Samsung M378B5273CH0-CH9 4GB
Samsung M378A1K43BB2-CTD 8GB
报告一个错误
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Bug description
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