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A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3000C14-16GTZ 16GB
比较
A-DATA Technology VDQVE1B16 2GB vs G Skill Intl F4-3000C14-16GTZ 16GB
总分
A-DATA Technology VDQVE1B16 2GB
总分
G Skill Intl F4-3000C14-16GTZ 16GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
更快的读取速度,GB/s
4
17.5
测试中的平均数值
更快的写入速度,GB/s
2,061.2
13.6
测试中的平均数值
需要考虑的原因
G Skill Intl F4-3000C14-16GTZ 16GB
报告一个错误
低于PassMark测试中的延时,ns
31
46
左右 -48% 更低的延时
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3000C14-16GTZ 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
31
读取速度,GB/s
4,937.3
17.5
写入速度,GB/s
2,061.2
13.6
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
759
3371
A-DATA Technology VDQVE1B16 2GB RAM的比较
takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB
G Skill Intl F4-3000C14-16GTZ 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology BL8G32C16U4WL.M8FE 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
G Skill Intl F4-3200C16-4GRK 4GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Kingston 9905678-029.A00G 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology 16ATF2G64HZ-2G3B2 16GB
Samsung M471B5673FH0-CF8 2GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-4000C15-8GTZR 8GB
Kingston KHX318C10FR/8G 8GB
Essencore Limited IM48GS88N26-JJJHA0 8GB
Kingston 99U5474-013.A00LF 2GB
G Skill Intl F4-4000C17-8GTZR 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-2666C19-8GSXK 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N
Samsung M471B1G73QH0-YK0 8GB
Apacer Technology 78.D2GF2.AU30B 16GB
G Skill Intl F3-2133C9-4GAB 4GB
Crucial Technology CT8G4SFD8213.C16FDD2 8GB
A-DATA Technology DDR3 1333G 2GB
Crucial Technology CT8G4DFS824A.M8FA 8GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Corsair CM4X16GE2666C16K8 16GB
报告一个错误
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Bug description
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