A-DATA Technology VDQVE1B16 2GB vs Micron Technology 16ATF2G64HZ-2G6E3 16GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

Micron Technology 16ATF2G64HZ-2G6E3 16GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

更快的读取速度，GB/s

4 15.8

测试中的平均数值
更快的写入速度，GB/s

2,061.2 12.4

测试中的平均数值

Micron Technology 16ATF2G64HZ-2G6E3 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G6E3 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 46

左右 -35% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 34
读取速度，GB/s

4,937.3 15.8
写入速度，GB/s

2,061.2 12.4
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

759 2902

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology CT8G4SFS824A.C8FDD1 8GB

Crucial Technology CT8G4SFS824A.C8FDD1 8GB

Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

G Skill Intl F4-3300C16-8GTZ 8GB

G Skill Intl F4-3300C16-8GTZ 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Corsair CMD32GX4M2C3466C16W 16GB

Corsair CMD32GX4M2C3466C16W 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Ramaxel Technology RMSA3340MB88HBF-3200 16GB

Ramaxel Technology RMSA3340MB88HBF-3200 16GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

SK Hynix GKE800UD102408-2133 8GB

SK Hynix GKE800UD102408-2133 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

G Skill Intl F4-3333C16-16GVK 16GB

G Skill Intl F4-3333C16-16GVK 16GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Kingston K1CXP8-MIE 16GB

Kingston K1CXP8-MIE 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BLS16G4D30AESE.M16FE 16GB

Crucial Technology BLS16G4D30AESE.M16FE 16GB

Kingston 9965516-430.A00G 16GB

Kingston 9965516-430.A00G 16GB

Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB

Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Netac Technology Co Ltd EKBLUE4162417AD 8GB

Netac Technology Co Ltd EKBLUE4162417AD 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Avant Technology W641GU67J5213N8 8GB

Avant Technology W641GU67J5213N8 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Teikon TMA851U6AFR6N-UHHC 4GB

Teikon TMA851U6AFR6N-UHHC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Golden Empire CL18-20-20 D4-3600 8GB

Golden Empire CL18-20-20 D4-3600 8GB