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A-DATA Technology VDQVE1B16 2GB
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB

A-DATA Technology VDQVE1B16 2GB vs Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB

总分
star star star star star
A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分
star star star star star
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB

Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB

差异 规格 评论

差异

A-DATA Technology VDQVE1B16 2GB 需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 11.1
    测试中的平均数值
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB 需要考虑的原因
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 46
    左右 -70% 更低的延时
  • 更快的写入速度，GB/s
    6.0 left arrow 2,061.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 27
  • 读取速度，GB/s
    4,937.3 left arrow 11.1
  • 写入速度，GB/s
    2,061.2 left arrow 6.0
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    759 left arrow 1890

A-DATA Technology VDQVE1B16 2GB RAM的比较

takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB

Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB
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Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
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Kingston KF3200C20S4/16G 16GB
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Kingston 9905403-156.A00LF 2GB
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Kingston 9905471-071.A00LF 8GB
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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
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Kingston 9965525-155.A00LF 8GB
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G Skill Intl F4-3466C16-4GVK 4GB
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Samsung M393B1G70QH0-YK0 8GB
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Samsung M393A4K40CB1-CRC 32GB
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A-DATA Technology DDR4 2666 2OZ 4GB
内存RAM
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Team Group Inc. Team-Elite-1333 4GB
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Corsair CMSX16GX4M1A2666C18 16GB
内存RAM
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Samsung M378A1K43BB2-CTD 8GB
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Samsung M471A2K43DB1-CWE 16GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Crucial Technology CT4G4DFS8213.C8FADP 4GB
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内存RAM