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A-DATA Technology VDQVE1B16 2GB
Wilk Elektronik S.A. GR2666D464L19/16G 16GB
比较
A-DATA Technology VDQVE1B16 2GB vs Wilk Elektronik S.A. GR2666D464L19/16G 16GB
总分
A-DATA Technology VDQVE1B16 2GB
总分
Wilk Elektronik S.A. GR2666D464L19/16G 16GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
更快的读取速度,GB/s
4
16.1
测试中的平均数值
更快的写入速度,GB/s
2,061.2
11.5
测试中的平均数值
需要考虑的原因
Wilk Elektronik S.A. GR2666D464L19/16G 16GB
报告一个错误
低于PassMark测试中的延时,ns
29
46
左右 -59% 更低的延时
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
Wilk Elektronik S.A. GR2666D464L19/16G 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
29
读取速度,GB/s
4,937.3
16.1
写入速度,GB/s
2,061.2
11.5
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
759
3098
A-DATA Technology VDQVE1B16 2GB RAM的比较
takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB
Wilk Elektronik S.A. GR2666D464L19/16G 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9965525-140.A00LF 8GB
PUSKILL PJ16TFK1GM8 16GB
G Skill Intl F5-5600J4040C16G 16GB
Crucial Technology CT4G4SFS824A.C8FBR2 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT4G4DFS8213.C8FDD2 4GB
TwinMOS 8DHE3MN8-HATP 2GB
AMD R748G2606U2S 8GB
AMD R538G1601U2S-UO 8GB
Avant Technology W641GU42J5213NC 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston 9965690-002.A00G 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT16G4DFD824A.C16FDD 16GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB
Kingston ACR16D3LS1KNG/4G 4GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
SK Hynix HMT351S6CFR8C-PB 4GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology CT16G4DFD824A.C16FDD 16GB
Samsung M471B5173DB0-YK0 4GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N
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