AMD AE34G1601U1 4GB vs Crucial Technology CT8G4DFS8213.C8FBD1 8GB

总分

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分

Crucial Technology CT8G4DFS8213.C8FBD1 8GB

Crucial Technology CT8G4DFS8213.C8FBD1 8GB

差异规格评论

差异

AMD AE34G1601U1 4GB

需要考虑的原因
AMD AE34G1601U1 4GB

报告一个错误

Crucial Technology CT8G4DFS8213.C8FBD1 8GB

需要考虑的原因
Crucial Technology CT8G4DFS8213.C8FBD1 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 67

左右 -103% 更低的延时
更快的读取速度，GB/s

14.5 6.8

测试中的平均数值
更快的写入速度，GB/s

9.5 3.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD AE34G1601U1 4GB

Crucial Technology CT8G4DFS8213.C8FBD1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

67 33
读取速度，GB/s

6.8 14.5
写入速度，GB/s

3.6 9.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

998 2543

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Ramaxel Technology RMR5030ME68F9F1600 4GB

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Samsung M378A1G43EB1-CRC 8GB

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A-DATA Technology AM2L16BC4R1-B0CS 4GB

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A-DATA Technology DDR4 3000 2OZ 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology CT8G4DFD8213.16FA11 8GB

Micron Technology CT8G4DFD8213.16FA11 8GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Samsung M391A2K43BB1-CRC 16GB

Samsung M391A2K43BB1-CRC 16GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

G Skill Intl F4-2800C16-4GRR 4GB

G Skill Intl F4-2800C16-4GRR 4GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Crucial Technology CT4G4SFS8213.C8FBD1 4GB

Crucial Technology CT4G4SFS8213.C8FBD1 4GB