AMD AE34G1601U1 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB

总分

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB

差异规格评论

差异

AMD AE34G1601U1 4GB

需要考虑的原因
AMD AE34G1601U1 4GB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 67

左右 -81% 更低的延时
更快的读取速度，GB/s

10.4 6.8

测试中的平均数值
更快的写入速度，GB/s

7.8 3.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD AE34G1601U1 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

67 37
读取速度，GB/s

6.8 10.4
写入速度，GB/s

3.6 7.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

998 2213

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD16GX4M4B3200C16 4GB

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Samsung M378B5273CH0-CH9 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Crucial Technology BLS8G4D240FSB.16FBD 8GB

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A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 4ATF51264HZ-2G3B2 4GB

Micron Technology 4ATF51264HZ-2G3B2 4GB