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AMD AE34G1601U1 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
比较
AMD AE34G1601U1 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
总分
AMD AE34G1601U1 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
差异
规格
评论
差异
需要考虑的原因
AMD AE34G1601U1 4GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
报告一个错误
低于PassMark测试中的延时,ns
26
67
左右 -158% 更低的延时
更快的读取速度,GB/s
16.8
6.8
测试中的平均数值
更快的写入速度,GB/s
13.5
3.6
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
AMD AE34G1601U1 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
67
26
读取速度,GB/s
6.8
16.8
写入速度,GB/s
3.6
13.5
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
998
2880
AMD AE34G1601U1 4GB RAM的比较
Panram International Corporation PUD31600C94GNJK 4GB
Kingston 9905428-196.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB RAM的比较
Kingston KN2M64-ETB 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
AMD AE34G1601U1 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N
Crucial Technology CT51264BA1339.C16F 4GB
Patriot Memory (PDP Systems) PSD48G240082 8GB
Samsung M391B5673EH1-CH9 2GB
Maxsun MSD48G30M3 8GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT8G4DFS8213.C8FDD1 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2P24HC8T1-BUSS 8GB
Kingston 99P5474-014.A00LF 4GB
Team Group Inc. Team-Elite-2400 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
AMD R744G2400U1S-UO 4GB
TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 9HTF12872JY80EE1D4 1GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology CT4G4DFS8213.8FA11 4GB
Crucial Technology CT25664AA800.M16FM 2GB
G Skill Intl F4-3000C15-8GVS 8GB
Samsung M391B5673FH0-CH9 2GB
Golden Empire CL15-15-15 D4-3000 8GB
Samsung M391B5673FH0-CH9 2GB
Crucial Technology BLS4G4D240FSB.8FBD2 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT16G4SFS832A.C8FB 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Swissbit SEU25664D6BC2EP-30 2GB
报告一个错误
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Bug description
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