AMD AE34G1601U1 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB

总分

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB

差异规格评论

差异

AMD AE34G1601U1 4GB

需要考虑的原因
AMD AE34G1601U1 4GB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 67

左右 -158% 更低的延时
更快的读取速度，GB/s

17.7 6.8

测试中的平均数值
更快的写入速度，GB/s

14.0 3.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

AMD AE34G1601U1 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

67 26
读取速度，GB/s

6.8 17.7
写入速度，GB/s

3.6 14.0
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

998 3017

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KF552C40-16 16GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

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Kingston 99U5474-010.A00LF 2GB

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SK Hynix HMA81GU6DJR8N-XN 8GB

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G Skill Intl F3-1866C8-8GTX 8GB

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Samsung M471B5273DH0-CK0 4GB