AMD R5316G1609U2K 8GB vs Corsair CMK16GX4M2A2666C16 8GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

Corsair CMK16GX4M2A2666C16 8GB

Corsair CMK16GX4M2A2666C16 8GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

Corsair CMK16GX4M2A2666C16 8GB

需要考虑的原因
Corsair CMK16GX4M2A2666C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 73

左右 -135% 更低的延时
更快的读取速度，GB/s

16.8 6.3

测试中的平均数值
更快的写入速度，GB/s

12.8 5.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

Corsair CMK16GX4M2A2666C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 31
读取速度，GB/s

6.3 16.8
写入速度，GB/s

5.2 12.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1309 3154

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

SK Hynix HMA81GU6JJR8N-VK 8GB

SK Hynix HMA81GU6JJR8N-VK 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Kingston KWTHG4-MIE 16GB

Kingston KWTHG4-MIE 16GB

Samsung M378A5244CB0-CRC 4GB

Samsung M378A5244CB0-CRC 4GB

SK Hynix HMA851U6AFR6N-UH 4GB

SK Hynix HMA851U6AFR6N-UH 4GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Gold Key Technology Co Ltd NMUD480E85-3200E 8GB

Gold Key Technology Co Ltd NMUD480E85-3200E 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

G Skill Intl F4-3600C19-8GTZRB 8GB

G Skill Intl F4-3600C19-8GTZRB 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

AMD R744G2606U1S 4GB

AMD R744G2606U1S 4GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Apacer Technology 78.C1GQ5.C7C0B 8GB

Apacer Technology 78.C1GQ5.C7C0B 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB

Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

G Skill Intl F4-4000C17-16GTZRB 16GB

G Skill Intl F4-4000C17-16GTZRB 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Apacer Technology AQD-D4U8GN26-SE 8GB

Apacer Technology AQD-D4U8GN26-SE 8GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

G Skill Intl F4-3600C16-16GTRSC 16GB

G Skill Intl F4-3600C16-16GTRSC 16GB

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

Apacer Technology GD2.1542WS.003 8GB

Apacer Technology GD2.1542WS.003 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Kingston 9905665-023.A00G 4GB

Kingston 9905665-023.A00G 4GB

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

Kingston 9905599-020.A00G 8GB

Kingston 9905599-020.A00G 8GB