AMD R5316G1609U2K 8GB vs G Skill Intl F4-2400C16-8GIS 8GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

G Skill Intl F4-2400C16-8GIS 8GB

G Skill Intl F4-2400C16-8GIS 8GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

G Skill Intl F4-2400C16-8GIS 8GB

需要考虑的原因
G Skill Intl F4-2400C16-8GIS 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 73

左右 -217% 更低的延时
更快的读取速度，GB/s

16.3 6.3

测试中的平均数值
更快的写入速度，GB/s

11.1 5.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

G Skill Intl F4-2400C16-8GIS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 23
读取速度，GB/s

6.3 16.3
写入速度，GB/s

5.2 11.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 11 13 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1309 2867

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Micron Technology 36ASF4G72PZ-2G3D1 32GB

Micron Technology 36ASF4G72PZ-2G3D1 32GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

G Skill Intl F4-2400C16-8GIS 8GB

G Skill Intl F4-2400C16-8GIS 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Corsair CMW32GX4M4D3600C16 8GB

Corsair CMW32GX4M4D3600C16 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Micron Technology 36ASF4G72LZ-2G3B1 32GB

Micron Technology 36ASF4G72LZ-2G3B1 32GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Crucial Technology CT16G4DFRA32A.C8FB 16GB

Crucial Technology CT16G4DFRA32A.C8FB 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

V-Color Technology Inc. TL48G26S8KRRGB16 8GB

V-Color Technology Inc. TL48G26S8KRRGB16 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

G Skill Intl F4-3400C16-16GTZ 16GB

G Skill Intl F4-3400C16-16GTZ 16GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Dust Leopard DDR4-2400 C17 8GB 8GB

Dust Leopard DDR4-2400 C17 8GB 8GB

SK Hynix HMT42GR7AFR4C-RD 16GB

SK Hynix HMT42GR7AFR4C-RD 16GB

G Skill Intl F4-2800C14-16GTZ 16GB

G Skill Intl F4-2800C14-16GTZ 16GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Corsair CM4X8GE2666C16K8 8GB

Corsair CM4X8GE2666C16K8 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Transcend Information JM2666HSE-16G 16GB

Transcend Information JM2666HSE-16G 16GB

Kingston 9905702-010.A00G 8GB

Kingston 9905702-010.A00G 8GB

Kingston 9905624-043.A00G 8GB

Kingston 9905624-043.A00G 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Crucial Technology CT16G4DFD832A.C16FP 16GB

Crucial Technology CT16G4DFD832A.C16FP 16GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

G Skill Intl F4-3000C15-4GVR 4GB

G Skill Intl F4-3000C15-4GVR 4GB