AMD R5316G1609U2K 8GB vs Kingston 9965669-009.A00G 8GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

Kingston 9965669-009.A00G 8GB

Kingston 9965669-009.A00G 8GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

Kingston 9965669-009.A00G 8GB

需要考虑的原因
Kingston 9965669-009.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 73

左右 -121% 更低的延时
更快的读取速度，GB/s

10.3 6.3

测试中的平均数值
更快的写入速度，GB/s

8.3 5.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

Kingston 9965669-009.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 33
读取速度，GB/s

6.3 10.3
写入速度，GB/s

5.2 8.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1309 2175

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK16GX4M2K4400C19 8GB

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AMD R5316G1609U2K 8GB

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G Skill Intl F4-3600C19-8GSXF 8GB

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Samsung M386B4G70DM0-CMA4 32GB

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Samsung M378A2K43CB1-CRC 16GB

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Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMV32GX4M1A2666C18 32GB

Corsair CMV32GX4M1A2666C18 32GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

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AMD R5S38G1601U2S 8GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB