AMD R5316G1609U2K 8GB vs Panram International Corporation R748G2133U2S 8GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

Panram International Corporation R748G2133U2S 8GB

Panram International Corporation R748G2133U2S 8GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

Panram International Corporation R748G2133U2S 8GB

需要考虑的原因
Panram International Corporation R748G2133U2S 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 73

左右 -204% 更低的延时
更快的读取速度，GB/s

13.4 6.3

测试中的平均数值
更快的写入速度，GB/s

6.2 5.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

Panram International Corporation R748G2133U2S 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 24
读取速度，GB/s

6.3 13.4
写入速度，GB/s

5.2 6.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1309 2078

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Gloway International (HK) STK2400CL17SNB16GB 16GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Team Group Inc. TEAMGROUP-UD3-2400 8GB

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G Skill Intl F4-3400C16-16GTZ 16GB

Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB

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Kingston KF548C38-16 16GB

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Samsung M391B5673EH1-CH9 2GB

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SK Hynix HMA42GR7AFR4N-TF 16GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Corsair CMU16GX4M2A2666C16 8GB

Corsair CMU16GX4M2A2666C16 8GB