AMD R5316G1609U2K 8GB vs Samsung M471A5143SB1-CRC 4GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

Samsung M471A5143SB1-CRC 4GB

Samsung M471A5143SB1-CRC 4GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

Samsung M471A5143SB1-CRC 4GB

需要考虑的原因
Samsung M471A5143SB1-CRC 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 73

左右 -204% 更低的延时
更快的读取速度，GB/s

14.9 6.3

测试中的平均数值
更快的写入速度，GB/s

10.6 5.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

Samsung M471A5143SB1-CRC 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 24
读取速度，GB/s

6.3 14.9
写入速度，GB/s

5.2 10.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1309 2196

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5403-468.A00LF 8GB

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Samsung M471A1K43CB1-CTD 8GB

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Samsung 1600 CL10 Series 8GB

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G Skill Intl F4-3000C16-8GSXKB 8GB

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SK Hynix HYMP112U64CP8-S6 1GB

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Kingston KHX3200C16D4/4GX 4GB

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Gloway International (HK) STK4U2400D17081C 8GB