AMD R534G1601U1S-UO 4GB vs Crucial Technology CT8G4DFS8213.M8FB 8GB

总分

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

总分

Crucial Technology CT8G4DFS8213.M8FB 8GB

Crucial Technology CT8G4DFS8213.M8FB 8GB

差异规格评论

差异

AMD R534G1601U1S-UO 4GB

需要考虑的原因
AMD R534G1601U1S-UO 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 31

左右 13% 更低的延时

Crucial Technology CT8G4DFS8213.M8FB 8GB

需要考虑的原因
Crucial Technology CT8G4DFS8213.M8FB 8GB

报告一个错误

更快的读取速度，GB/s

15.2 14.7

测试中的平均数值
更快的写入速度，GB/s

10.1 9.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R534G1601U1S-UO 4GB

Crucial Technology CT8G4DFS8213.M8FB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 31
读取速度，GB/s

14.7 15.2
写入速度，GB/s

9.2 10.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2272 2712

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair VS1GB800D2 1GB

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Corsair CMK16GX4M4B3333C16 4GB

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AMD R5S38G1601U2S 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Corsair CMK128GX4M8X3800C19 16GB

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A-DATA Technology AM2L16BC4R1-B0CS 4GB

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Crucial Technology CT8G4SFS824A.C8FP 8GB

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Kingston ACR16D3LFS1KBG/2G 2GB

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AMD R5316G1609U2K 8GB

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Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

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SK Hynix HMA41GR7MFR8N-TF 8GB

SK Hynix HMA41GR7MFR8N-TF 8GB

Samsung M471B5673FH0-CF8 2GB

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Kingston 9965640-004.C00G 16GB

Kingston 9965640-004.C00G 16GB

Samsung M393B1K70CH0-CH9 8GB

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Patriot Memory (PDP Systems) 3600 C16 Series 8GB

Patriot Memory (PDP Systems) 3600 C16 Series 8GB