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AMD R534G1601U1S-UO 4GB
Kllisre M471A1K43CB1-CTD 8GB

AMD R534G1601U1S-UO 4GB vs Kllisre M471A1K43CB1-CTD 8GB

总分
star star star star star
AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

总分
star star star star star
Kllisre M471A1K43CB1-CTD 8GB

Kllisre M471A1K43CB1-CTD 8GB

差异 规格 评论

差异

AMD R534G1601U1S-UO 4GB 需要考虑的原因
AMD R534G1601U1S-UO 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 45
    左右 40% 更低的延时
  • 更快的读取速度，GB/s
    14.7 left arrow 11.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.2 left arrow 8.2
    测试中的平均数值
Kllisre M471A1K43CB1-CTD 8GB 需要考虑的原因
Kllisre M471A1K43CB1-CTD 8GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
AMD R534G1601U1S-UO 4GB
Kllisre M471A1K43CB1-CTD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 45
  • 读取速度，GB/s
    14.7 left arrow 11.4
  • 写入速度，GB/s
    9.2 left arrow 8.2
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2272 left arrow 2281

AMD R534G1601U1S-UO 4GB RAM的比较

AMD R534G1601U1S 4GB
Samsung M378B5273CH0-CH9 4GB

Kllisre M471A1K43CB1-CTD 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT8G4DFS824A.C8FJ 8GB
Crucial Technology CT8G4DFS824A.C8FJ 8GB
内存RAM
Samsung M393B5170EH1-CH9 4GB
Samsung M393B5170EH1-CH9 4GB
Mushkin 99[2/7/4]189F 4GB
Mushkin 99[2/7/4]189F 4GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Corsair CMSX32GX4M2A2400C16 16GB
Corsair CMSX32GX4M2A2400C16 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
V-Color Technology Inc. TA48G36S818BN 8GB
V-Color Technology Inc. TA48G36S818BN 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Corsair CM4B8G7L2666A16K2-O 8GB
Corsair CM4B8G7L2666A16K2-O 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMK16GX4M2C3600C20 8GB
Corsair CMK16GX4M2C3600C20 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Essencore Limited IM48GU48A30-GIIHM 8GB
Essencore Limited IM48GU48A30-GIIHM 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Kingston 9905625-142.A00G 16GB
Kingston 9905625-142.A00G 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Corsair CMR16GX4M2E4266C19 8GB
Corsair CMR16GX4M2E4266C19 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-2400C16-4GRS 4GB
G Skill Intl F4-2400C16-4GRS 4GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology CT4G4DFS824A.M8FB 4GB
Crucial Technology CT4G4DFS824A.M8FB 4GB
内存RAM