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AMD R538G1601U2S 8GB
Panram International Corporation PUD42133C158G2VS 8GB

AMD R538G1601U2S 8GB vs Panram International Corporation PUD42133C158G2VS 8GB

总分
star star star star star
AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

总分
star star star star star
Panram International Corporation PUD42133C158G2VS 8GB

Panram International Corporation PUD42133C158G2VS 8GB

差异 规格 评论

差异

AMD R538G1601U2S 8GB 需要考虑的原因
AMD R538G1601U2S 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 32
    左右 41% 更低的延时
  • 更快的读取速度，GB/s
    18.4 left arrow 16.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.3 left arrow 12.2
    测试中的平均数值
Panram International Corporation PUD42133C158G2VS 8GB 需要考虑的原因
Panram International Corporation PUD42133C158G2VS 8GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
AMD R538G1601U2S 8GB
Panram International Corporation PUD42133C158G2VS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    19 left arrow 32
  • 读取速度，GB/s
    18.4 left arrow 16.4
  • 写入速度，GB/s
    12.3 left arrow 12.2
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3189 left arrow 2871

AMD R538G1601U2S 8GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston HX316C10F/8 8GB

Panram International Corporation PUD42133C158G2VS 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Panram International Corporation PUD42133C158G2VS 8GB
Panram International Corporation PUD42133C158G2VS 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
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G Skill Intl F4-2133C15-4GRS 4GB
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Kingston 9905630-051.A00G 16GB
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内存RAM
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内存RAM
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内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-4000C17-8GTZR 8GB
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内存RAM
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内存RAM
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Samsung M3 93T5750CZA-CE6 2GB
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Crucial Technology CT8G4SFD824AC16FBD1 8GB
内存RAM
SK Hynix HMT451U7BFR8C-RD 4GB
SK Hynix HMT451U7BFR8C-RD 4GB
Samsung M471A1K1KBB1-CRC 8GB
Samsung M471A1K1KBB1-CRC 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BLS4G4D240FSB.8FBD 4GB
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内存RAM
Kingston 99U5584-001.A00LF 4GB
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G Skill Intl F4-3600C16-16GTZRC 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
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Crucial Technology BLS16G4S240FSD.16FBD 16GB
内存RAM