AMD R538G1601U2S-UO 8GB vs Samsung M471A5244CB0-CWE 4GB

总分

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

总分

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

差异规格评论

差异

AMD R538G1601U2S-UO 8GB

需要考虑的原因
AMD R538G1601U2S-UO 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 38

左右 32% 更低的延时

Samsung M471A5244CB0-CWE 4GB

需要考虑的原因
Samsung M471A5244CB0-CWE 4GB

报告一个错误

更快的读取速度，GB/s

15.5 14.2

测试中的平均数值
更快的写入速度，GB/s

12.0 10.0

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

AMD R538G1601U2S-UO 8GB

Samsung M471A5244CB0-CWE 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 38
读取速度，GB/s

14.2 15.5
写入速度，GB/s

10.0 12.0
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2634 2283

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

G Skill Intl F4-3200C16-8GTZSK 8GB

G Skill Intl F4-3200C16-8GTZSK 8GB

Kingston 99U5471-052.A00LF 8GB

Kingston 99U5471-052.A00LF 8GB

Corsair CMK16GX4M4A2800C16 4GB

Corsair CMK16GX4M4A2800C16 4GB

Samsung M471B1G73BH0-CH9 8GB

Samsung M471B1G73BH0-CH9 8GB

Corsair CM4X8GF2666C18S2 8GB

Corsair CM4X8GF2666C18S2 8GB

Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

Kingston KVR24N17S8/4 4GB

Kingston KVR24N17S8/4 4GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Essencore Limited KD48GU88A-26N1600 8GB

Essencore Limited KD48GU88A-26N1600 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3200C16-8GVKBN 8GB

G Skill Intl F4-3200C16-8GVKBN 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 18ADF2G72AZ-2G6E1 16GB

Micron Technology 18ADF2G72AZ-2G6E1 16GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Corsair CMW16GX4M2C3466C16 8GB

Corsair CMW16GX4M2C3466C16 8GB

Kingston 99U5595-005.A00LF 2GB

Kingston 99U5595-005.A00LF 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N

Kingston 99U5471-020.A00LF 4GB

Kingston 99U5471-020.A00LF 4GB

Essencore Limited KD48GS88A-26N1600 8GB

Essencore Limited KD48GS88A-26N1600 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-3600C16-8GTZNC 8GB

G Skill Intl F4-3600C16-8GTZNC 8GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Kingston KHX2133C14S4/8G 8GB

Kingston KHX2133C14S4/8G 8GB

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

Crucial Technology BLS8G4D26BFSEK.8FBR 8GB

Crucial Technology BLS8G4D26BFSEK.8FBR 8GB

Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

Team Group Inc. TEAMGROUP-D4-3733 8GB

Team Group Inc. TEAMGROUP-D4-3733 8GB