Asgard VMA45UG-MEC1U2AW1 8GB vs G Skill Intl F4-3000C16-16GRS 16GB

总分

Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

总分

G Skill Intl F4-3000C16-16GRS 16GB

G Skill Intl F4-3000C16-16GRS 16GB

差异规格评论

差异

Asgard VMA45UG-MEC1U2AW1 8GB

需要考虑的原因
Asgard VMA45UG-MEC1U2AW1 8GB

报告一个错误

G Skill Intl F4-3000C16-16GRS 16GB

需要考虑的原因
G Skill Intl F4-3000C16-16GRS 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 47

左右 -52% 更低的延时
更快的读取速度，GB/s

17.7 11.8

测试中的平均数值
更快的写入速度，GB/s

14.7 9.2

测试中的平均数值

规格

完整的技术规格清单

Asgard VMA45UG-MEC1U2AW1 8GB

G Skill Intl F4-3000C16-16GRS 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

47 31
读取速度，GB/s

11.8 17.7
写入速度，GB/s

9.2 14.7
内存带宽，mbps

19200 19200

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2323 3482

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT16G4SFD824A.C16FDD 16GB

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Crucial Technology BL16G32C16U4RL.M8FB1 16GB

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Samsung M393B1K70QB0-CK0 8GB

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Gloway International Co. Ltd. TYA4U2666D19321C 32GB

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PNY Electronics PNY 2GB

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Crucial Technology BLE4G4D26AFEA.8FBD 4GB

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SK Hynix HMA851U6DJR6N-XN 4GB

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Samsung M393B1G70QH0-YK0 8GB

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Corsair CMK16GX4M2A2666C16 8GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Apacer Technology 78.BAGN8.40C0B 4GB

Apacer Technology 78.BAGN8.40C0B 4GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Kingston 9965589-007.D01G 8GB

Kingston 9965589-007.D01G 8GB

Samsung M471B5173QH0-YK0 4GB

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Micron Technology 8ATF1G64HZ-2G1A1 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB