Samsung M378B5773DH0-CH9 2GB vs SK Hynix HMA41GR7BJR4N-UH 8GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

SK Hynix HMA41GR7BJR4N-UH 8GB

SK Hynix HMA41GR7BJR4N-UH 8GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

SK Hynix HMA41GR7BJR4N-UH 8GB

需要考虑的原因
SK Hynix HMA41GR7BJR4N-UH 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 39

左右 -34% 更低的延时
更快的读取速度，GB/s

12.5 11.7

测试中的平均数值
更快的写入速度，GB/s

9.7 7.2

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

SK Hynix HMA41GR7BJR4N-UH 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 29
读取速度，GB/s

11.7 12.5
写入速度，GB/s

7.2 9.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1749 2609

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF1G64AZ-2G1B1 8GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Corsair CMG32GX4M2E3200C16 16GB

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Samsung M378B5773DH0-CH9 2GB

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SK Hynix HMA41GR7BJR4N-UH 8GB

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Samsung M391B5273CH0-CH9 4GB

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SK Hynix HMA41GR7AFR8N-UH 8GB

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