Asgard VMA45UG-MEC1U2AW1 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

总分

Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

差异规格评论

差异

Asgard VMA45UG-MEC1U2AW1 8GB

需要考虑的原因
Asgard VMA45UG-MEC1U2AW1 8GB

报告一个错误

更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 47

左右 -68% 更低的延时
更快的读取速度，GB/s

13.8 11.8

测试中的平均数值
更快的写入速度，GB/s

10.1 9.2

测试中的平均数值

规格

完整的技术规格清单

Asgard VMA45UG-MEC1U2AW1 8GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

47 28
读取速度，GB/s

11.8 13.8
写入速度，GB/s

9.2 10.1
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2323 2179

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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