Asgard VMA45UG-MEC1U2AW1 8GB vs Samsung M378A1K43EB2-CWE 8GB

总分

Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

总分

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

差异规格评论

差异

Asgard VMA45UG-MEC1U2AW1 8GB

需要考虑的原因
Asgard VMA45UG-MEC1U2AW1 8GB

报告一个错误

Samsung M378A1K43EB2-CWE 8GB

需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 47

左右 -42% 更低的延时
更快的读取速度，GB/s

17.6 11.8

测试中的平均数值
更快的写入速度，GB/s

12.0 9.2

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33 更高的带宽

规格

完整的技术规格清单

Asgard VMA45UG-MEC1U2AW1 8GB

Samsung M378A1K43EB2-CWE 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

47 33
读取速度，GB/s

11.8 17.6
写入速度，GB/s

9.2 12.0
内存带宽，mbps

19200 25600

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2323 2910

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

A-DATA Technology DDR4 2133 2OZ 8GB

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Kingston KHX16LC9/8GX 8GB

Kingston KHX16LC9/8GX 8GB

Corsair CMD64GX4M4A2666C15 16GB

Corsair CMD64GX4M4A2666C15 16GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Apacer Technology 78.C2GF6.AU20B 8GB

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