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ASint Technology SSA302G08-EGN1C 4GB
Corsair CMR32GX4M4C3600C18 8GB

ASint Technology SSA302G08-EGN1C 4GB vs Corsair CMR32GX4M4C3600C18 8GB

总分
star star star star star
ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

总分
star star star star star
Corsair CMR32GX4M4C3600C18 8GB

Corsair CMR32GX4M4C3600C18 8GB

差异 规格 评论

差异

ASint Technology SSA302G08-EGN1C 4GB 需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 32
    左右 19% 更低的延时
Corsair CMR32GX4M4C3600C18 8GB 需要考虑的原因
Corsair CMR32GX4M4C3600C18 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.5 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.4 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
ASint Technology SSA302G08-EGN1C 4GB
Corsair CMR32GX4M4C3600C18 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 32
  • 读取速度，GB/s
    12.6 left arrow 16.5
  • 写入速度，GB/s
    9.5 left arrow 14.4
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2174 left arrow 3459

ASint Technology SSA302G08-EGN1C 4GB RAM的比较

Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB

Corsair CMR32GX4M4C3600C18 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M386B4G70DM0-CMA4 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Corsair CMR32GX4M4C3600C18 8GB
Corsair CMR32GX4M4C3600C18 8GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Kingston 9965669-025.A00G 8GB
Kingston 9965669-025.A00G 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
SK Hynix HMA82GU7AFR8N-UH 16GB
SK Hynix HMA82GU7AFR8N-UH 16GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Corsair CMK16GX4M2L3200C16 8GB
Corsair CMK16GX4M2L3200C16 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Kingston 9905633-017.A00G 8GB
Kingston 9905633-017.A00G 8GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Corsair CMK8GX4M1A2400C16 8GB
Corsair CMK8GX4M1A2400C16 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-4000C15-8GVK 8GB
G Skill Intl F4-4000C15-8GVK 8GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Essencore Limited KD4AGU880-36A180X 16GB
Essencore Limited KD4AGU880-36A180X 16GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Micron Technology 9ASF51272PZ-2G1A2 4GB
Micron Technology 9ASF51272PZ-2G1A2 4GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
SK Hynix HMA41GR7AFR4N-TF 8GB
SK Hynix HMA41GR7AFR4N-TF 8GB
内存RAM
Kingston 9905471-076.A00LF 8GB
Kingston 9905471-076.A00LF 8GB
G Skill Intl F4-3466C18-8GTZRXB 8GB
G Skill Intl F4-3466C18-8GTZRXB 8GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Corsair CMG32GX4M2D3600C18 16GB
Corsair CMG32GX4M2D3600C18 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-3200C16-4GRB 4GB
G Skill Intl F4-3200C16-4GRB 4GB
内存RAM