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ASint Technology SSA302G08-EGN1C 4GB
Crucial Technology BLS8G4S240FSD.16FAR 8GB

ASint Technology SSA302G08-EGN1C 4GB vs Crucial Technology BLS8G4S240FSD.16FAR 8GB

总分
star star star star star
ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

总分
star star star star star
Crucial Technology BLS8G4S240FSD.16FAR 8GB

Crucial Technology BLS8G4S240FSD.16FAR 8GB

差异 规格 评论

差异

ASint Technology SSA302G08-EGN1C 4GB 需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB
报告一个错误
Crucial Technology BLS8G4S240FSD.16FAR 8GB 需要考虑的原因
Crucial Technology BLS8G4S240FSD.16FAR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 26
    左右 -4% 更低的延时
  • 更快的读取速度，GB/s
    15.5 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.7 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
ASint Technology SSA302G08-EGN1C 4GB
Crucial Technology BLS8G4S240FSD.16FAR 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 25
  • 读取速度，GB/s
    12.6 left arrow 15.5
  • 写入速度，GB/s
    9.5 left arrow 12.7
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2174 left arrow 2685

ASint Technology SSA302G08-EGN1C 4GB RAM的比较

Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB

Crucial Technology BLS8G4S240FSD.16FAR 8GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
JUHOR JHD2666U1916JG 16GB
JUHOR JHD2666U1916JG 16GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Kingston 9905702-135.A00G 8GB
Kingston 9905702-135.A00G 8GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Crucial Technology BLS8G4S240FSD.16FAR 8GB
Crucial Technology BLS8G4S240FSD.16FAR 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BL16G32C16U4RL.M16FE 16GB
Crucial Technology BL16G32C16U4RL.M16FE 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Avant Technology W641GU42J5213NC 8GB
Avant Technology W641GU42J5213NC 8GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
A-DATA Technology DDR4 3333 2OZ 4GB
A-DATA Technology DDR4 3333 2OZ 4GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Apacer Technology 78.C1GMM.AUF0B 8GB
Apacer Technology 78.C1GMM.AUF0B 8GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
G Skill Intl F4-4266C17-16GTZRB 16GB
G Skill Intl F4-4266C17-16GTZRB 16GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston KHX3200C16D4/8GX 8GB
Kingston KHX3200C16D4/8GX 8GB
内存RAM
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
G Skill Intl F4-2800C14-16GVK 16GB
G Skill Intl F4-2800C14-16GVK 16GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Crucial Technology CT4G4SFS824A.C8FBD2 4GB
Crucial Technology CT4G4SFS824A.C8FBD2 4GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Corsair CMK16GX4M1C3000C16 16GB
Corsair CMK16GX4M1C3000C16 16GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
SK Hynix HMA81GS6CJRJR-VK 8GB
SK Hynix HMA81GS6CJRJR-VK 8GB
内存RAM