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PNY Electronics PNY 2GB
Corsair CMK16GX4M1C3000C16 16GB

PNY Electronics PNY 2GB vs Corsair CMK16GX4M1C3000C16 16GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
Corsair CMK16GX4M1C3000C16 16GB

Corsair CMK16GX4M1C3000C16 16GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
Corsair CMK16GX4M1C3000C16 16GB 需要考虑的原因
Corsair CMK16GX4M1C3000C16 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 27
    左右 -29% 更低的延时
  • 更快的读取速度，GB/s
    18.4 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.8 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
Corsair CMK16GX4M1C3000C16 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 21
  • 读取速度，GB/s
    13.8 left arrow 18.4
  • 写入速度，GB/s
    8.4 left arrow 9.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 2929

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Corsair CMK16GX4M1C3000C16 16GB RAM的比较

Crucial Technology CT2K102464BD160B 8GB
SK Hynix HYMP112U64CP8-S5 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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PNY Electronics PNY 2GB
Corsair CMK16GX4M1C3000C16 16GB
Corsair CMK16GX4M1C3000C16 16GB
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Kingston KHX2133C11D3/4GX 4GB
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内存RAM
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内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
SK Hynix HMA81GU7AFR8N-UH 8GB
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内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
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内存RAM
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G Skill Intl F4-4800C18-8GTRG 8GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
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内存RAM