Samsung M3 78T5663RZ3-CF7 2GB vs Ramaxel Technology RMUA5120MB86H9F2400 4GB

总分

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分

Ramaxel Technology RMUA5120MB86H9F2400 4GB

Ramaxel Technology RMUA5120MB86H9F2400 4GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 16.3

测试中的平均数值
更快的写入速度，GB/s

2,784.6 11.6

测试中的平均数值

Ramaxel Technology RMUA5120MB86H9F2400 4GB

需要考虑的原因
Ramaxel Technology RMUA5120MB86H9F2400 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 65

左右 -160% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CF7 2GB

Ramaxel Technology RMUA5120MB86H9F2400 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 25
读取速度，GB/s

4,806.8 16.3
写入速度，GB/s

2,784.6 11.6
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

932 2680

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 18HTF12872AY-800F1 1GB

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Crucial Technology BLM16G44C19U4BL.M8FB 16GB

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G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F4-4400C17-16GTZR 16GB

G Skill Intl F4-4400C17-16GTZR 16GB

Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

Corsair CMK16GX4M4A2400C16 4GB

Corsair CMK16GX4M4A2400C16 4GB

Kingston 99P5471-002.A00LF 2GB

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Samsung M393A4K40BB0-CPB 32GB

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Kingston ACR26D4S9S8KA-8 8GB