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ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-2933C14-16GFX 16GB

ASint Technology SSA302G08-EGN1C 4GB vs G Skill Intl F4-2933C14-16GFX 16GB

总分
star star star star star
ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

总分
star star star star star
G Skill Intl F4-2933C14-16GFX 16GB

G Skill Intl F4-2933C14-16GFX 16GB

差异 规格 评论

差异

ASint Technology SSA302G08-EGN1C 4GB 需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 41
    左右 37% 更低的延时
G Skill Intl F4-2933C14-16GFX 16GB 需要考虑的原因
G Skill Intl F4-2933C14-16GFX 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.7 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.7 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-2933C14-16GFX 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 41
  • 读取速度，GB/s
    12.6 left arrow 16.7
  • 写入速度，GB/s
    9.5 left arrow 13.7
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2174 left arrow 3731

ASint Technology SSA302G08-EGN1C 4GB RAM的比较

Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB

G Skill Intl F4-2933C14-16GFX 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Samsung M393A1G40EB1-CPB 8GB
Samsung M393A1G40EB1-CPB 8GB
内存RAM
Kingston 9905403-434.A00LF 4GB
Kingston 9905403-434.A00LF 4GB
Corsair CM4X8GF2400Z16K4 8GB
Corsair CM4X8GF2400Z16K4 8GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Crucial Technology CT32G4DFD8266.M16FB 32GB
Crucial Technology CT32G4DFD8266.M16FB 32GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
G Skill Intl F4-4000C16-8GTZR 8GB
G Skill Intl F4-4000C16-8GTZR 8GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
G Skill Intl F4-3000C16-8GTZR 8GB
G Skill Intl F4-3000C16-8GTZR 8GB
内存RAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Crucial Technology BLS16G4S26BFSD.16FD 16GB
Crucial Technology BLS16G4S26BFSD.16FD 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Samsung M386A8K40BM1-CRC 64GB
Samsung M386A8K40BM1-CRC 64GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
G Skill Intl F4-3200C14-16GTRG 16GB
G Skill Intl F4-3200C14-16GTRG 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Avant Technology J642GU42J5213N2 16GB
Avant Technology J642GU42J5213N2 16GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
Kingston 8ATF1G64AZ-2G3A141 8GB
Kingston 8ATF1G64AZ-2G3A141 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Corsair CM4X8GE2400C15K4 8GB
Corsair CM4X8GE2400C15K4 8GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
A-DATA Technology AO1P24HC4R1-BUYS 4GB
A-DATA Technology AO1P24HC4R1-BUYS 4GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Micron Technology CT8G4DFD8213.16FA11 8GB
Micron Technology CT8G4DFD8213.16FA11 8GB
内存RAM
G Skill Intl F3-17000CL9-4GBXLD 4GB
G Skill Intl F3-17000CL9-4GBXLD 4GB
Samsung V-GeN D4S8GL30A8TX5 8GB
Samsung V-GeN D4S8GL30A8TX5 8GB
内存RAM