ASint Technology SSA302G08-EGN1C 4GB vs SK Hynix HMA81GR7MFR8N-UH 8GB

总分

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

总分

SK Hynix HMA81GR7MFR8N-UH 8GB

SK Hynix HMA81GR7MFR8N-UH 8GB

差异规格评论

差异

ASint Technology SSA302G08-EGN1C 4GB

需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 56

左右 54% 更低的延时
更快的读取速度，GB/s

12.6 9.5

测试中的平均数值
更快的写入速度，GB/s

9.5 7.2

测试中的平均数值

SK Hynix HMA81GR7MFR8N-UH 8GB

需要考虑的原因
SK Hynix HMA81GR7MFR8N-UH 8GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

ASint Technology SSA302G08-EGN1C 4GB

SK Hynix HMA81GR7MFR8N-UH 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 56
读取速度，GB/s

12.6 9.5
写入速度，GB/s

9.5 7.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2174 2138

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT16G4SFD832A.C16FP 16GB

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Samsung M471A5244CB0-CWE 4GB

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Samsung M3 78T5663RZ3-CF7 2GB

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G Skill Intl F4-4000C18-16GTRS 16GB

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Crucial Technology CT25664AA800.M16FM 2GB

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G Skill Intl F4-2800C15-8GTXG 8GB

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Apacer Technology 78.BAGNF.40C0B 4GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Corsair CMK32GX4M2F4000C19 16GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Apacer Technology 78.C1GMW.AUC0B 8GB

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Samsung M393B2G70BH0-CK0 16GB

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Corsair CMK16GX4M2Z2400C16 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Corsair CMK64GX4M4B2800C14 16GB

Corsair CMK64GX4M4B2800C14 16GB

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Samsung M378B5173BH0-CH9 4GB

A-DATA Technology AD4U240038G17-BHYA 8GB

A-DATA Technology AD4U240038G17-BHYA 8GB

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G Skill Intl F4-4400C19-32GTRS 32GB

G Skill Intl F4-4400C19-32GTRS 32GB