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ASint Technology SSA302G08-EGN1C 4GB
SK Hynix HMA851S6DJR6N-VK 4GB

ASint Technology SSA302G08-EGN1C 4GB vs SK Hynix HMA851S6DJR6N-VK 4GB

总分
star star star star star
ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

总分
star star star star star
SK Hynix HMA851S6DJR6N-VK 4GB

SK Hynix HMA851S6DJR6N-VK 4GB

差异 规格 评论

差异

ASint Technology SSA302G08-EGN1C 4GB 需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 40
    左右 35% 更低的延时
SK Hynix HMA851S6DJR6N-VK 4GB 需要考虑的原因
SK Hynix HMA851S6DJR6N-VK 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.2 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
ASint Technology SSA302G08-EGN1C 4GB
SK Hynix HMA851S6DJR6N-VK 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 40
  • 读取速度，GB/s
    12.6 left arrow 15.0
  • 写入速度，GB/s
    9.5 left arrow 11.2
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2174 left arrow 2100

ASint Technology SSA302G08-EGN1C 4GB RAM的比较

Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB

SK Hynix HMA851S6DJR6N-VK 4GB RAM的比较

Kingston 9905458-017.A01LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
ASint Technology SSA302G08-EGN1C 4GB
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SK Hynix HMA851S6DJR6N-VK 4GB
SK Hynix HMA851S6DJR6N-VK 4GB
内存RAM
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内存RAM
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内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Apacer Technology 78.C1GS7.AUW0B 8GB
Apacer Technology 78.C1GS7.AUW0B 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
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内存RAM
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内存RAM
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内存RAM
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Samsung M471B5673FH0-CF8 2GB
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