RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
ASint Technology SSA302G08-EGN1C 4GB
Team Group Inc. TEAMGROUP-UD4-2800 8GB
比较
ASint Technology SSA302G08-EGN1C 4GB vs Team Group Inc. TEAMGROUP-UD4-2800 8GB
总分
ASint Technology SSA302G08-EGN1C 4GB
总分
Team Group Inc. TEAMGROUP-UD4-2800 8GB
差异
规格
评论
差异
需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB
报告一个错误
需要考虑的原因
Team Group Inc. TEAMGROUP-UD4-2800 8GB
报告一个错误
低于PassMark测试中的延时,ns
22
26
左右 -18% 更低的延时
更快的读取速度,GB/s
17.5
12.6
测试中的平均数值
更快的写入速度,GB/s
12.7
9.5
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
ASint Technology SSA302G08-EGN1C 4GB
Team Group Inc. TEAMGROUP-UD4-2800 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
22
读取速度,GB/s
12.6
17.5
写入速度,GB/s
9.5
12.7
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2174
2960
ASint Technology SSA302G08-EGN1C 4GB RAM的比较
Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Team Group Inc. TEAMGROUP-UD4-2800 8GB RAM的比较
Crucial Technology CT51264BD1339.M16F 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4DFD832A.M16FJ 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Apacer Technology 78.C1GMM.AUC0B 8GB
Crucial Technology CT25664BA160B.C16F 2GB
Kingston 9905734-003.A00G 32GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Apacer Technology 78.CAGR9.40C0B 8GB
Samsung M471B5673FH0-CF8 2GB
Kingston 9965640-035.C00G 32GB
Samsung M393B1K70QB0-CK0 8GB
Patriot Memory (PDP Systems) PSD48G26662 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
SK Hynix HMT325S6BFR8C-H9 2GB
V-Color Technology Inc. TA48G30S815GK 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology CT16G4DFD824A.C16FE 16GB
Kingston 9905403-011.A03LF 2GB
GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMV16GX4M1A2400C16 16GB
Samsung M471B5173DB0-YK0 4GB
Gloway International (HK) STK4U2400D17082C 8GB
Corsair CML8GX3M2A1600C9 4GB
Micron Technology 8ATF1G64AZ-3G2J1 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Patriot Memory (PDP Systems) PSD44G266682 4GB
报告一个错误
×
Bug description
Source link