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ASint Technology SSA302G08-EGN1C 4GB
Teikon TMA851U6AFR6N-UHHC 4GB
比较
ASint Technology SSA302G08-EGN1C 4GB vs Teikon TMA851U6AFR6N-UHHC 4GB
总分
ASint Technology SSA302G08-EGN1C 4GB
总分
Teikon TMA851U6AFR6N-UHHC 4GB
差异
规格
评论
差异
需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB
报告一个错误
低于PassMark测试中的延时,ns
26
32
左右 19% 更低的延时
更快的读取速度,GB/s
12.6
11.9
测试中的平均数值
更快的写入速度,GB/s
9.5
8.7
测试中的平均数值
需要考虑的原因
Teikon TMA851U6AFR6N-UHHC 4GB
报告一个错误
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
ASint Technology SSA302G08-EGN1C 4GB
Teikon TMA851U6AFR6N-UHHC 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
32
读取速度,GB/s
12.6
11.9
写入速度,GB/s
9.5
8.7
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2174
1875
ASint Technology SSA302G08-EGN1C 4GB RAM的比较
Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Teikon TMA851U6AFR6N-UHHC 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
ASint Technology SSA302G08-EGN1C 4GB
Teikon TMA851U6AFR6N-UHHC 4GB
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SK Hynix HMA851U6CJR6N-UH 4GB
Kingston KHX2400C11D3/4GX 4GB
Corsair CMK32GX4M2A2800C16 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
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Samsung M378A2G43MX3-CTD 16GB
Kingston KHX3200C18D4/8G 8GB
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Samsung M471B5773DH0-CK0 2GB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
Crucial Technology CT51264AC800.C16FC 4GB
Corsair CMK64GX4M4B3600C18 16GB
Kingston 99U5474-038.A00LF 4GB
Ramaxel Technology RMSA3320MJ78HAF-3200 8GB
Apacer Technology 78.01GA0.9K5 1GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
报告一个错误
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Bug description
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