Avant Technology F641GU67F9333G 8GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

总分

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

总分

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

差异规格评论

差异

Avant Technology F641GU67F9333G 8GB

需要考虑的原因
Avant Technology F641GU67F9333G 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 73

左右 62% 更低的延时

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

需要考虑的原因
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

报告一个错误

更快的读取速度，GB/s

15.1 11.1

测试中的平均数值
更快的写入速度，GB/s

7.9 6.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Avant Technology F641GU67F9333G 8GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 73
读取速度，GB/s

11.1 15.1
写入速度，GB/s

6.5 7.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2113 1724

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMW16GX4M2D3600C18 8GB

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Avant Technology F641GU67F9333G 8GB

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Kingston 99U5474-010.A00LF 2GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Crucial Technology CT8G4DFS832A.C8FJ 8GB

Crucial Technology CT8G4DFS832A.C8FJ 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Maxsun MSD48G32Q3 8GB

Maxsun MSD48G32Q3 8GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

SK Hynix HMA81GU6DJR8N-VK 8GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Gloway International Co. Ltd. TYA4U2666D19321C 32GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Corsair CM4X8GD3200C16K4 8GB

Corsair CM4X8GD3200C16K4 8GB