Avant Technology F6451U64F9333G 4GB vs Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

总分

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

总分

Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

差异规格评论

差异

Avant Technology F6451U64F9333G 4GB

需要考虑的原因
Avant Technology F6451U64F9333G 4GB

报告一个错误

Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 27

左右 -8% 更低的延时
更快的读取速度，GB/s

15.9 12.8

测试中的平均数值
更快的写入速度，GB/s

12.0 6.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Avant Technology F6451U64F9333G 4GB

Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 25
读取速度，GB/s

12.8 15.9
写入速度，GB/s

6.7 12.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 12 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2045 3023

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99U5474-010.A00LF 2GB

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Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

Crucial Technology CT16G4DFD8266.M16FH 16GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Lexar Co Limited LD4AS016G-H3200GST 16GB

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