Corsair CM2X1024-6400C4 1GB vs Kingston KHX2933C17S4/8G 8GB

总分

Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

总分

Kingston KHX2933C17S4/8G 8GB

Kingston KHX2933C17S4/8G 8GB

差异规格评论

差异

Corsair CM2X1024-6400C4 1GB

需要考虑的原因
Corsair CM2X1024-6400C4 1GB

报告一个错误

更快的读取速度，GB/s

4 17.8

测试中的平均数值

Kingston KHX2933C17S4/8G 8GB

需要考虑的原因
Kingston KHX2933C17S4/8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 54

左右 -100% 更低的延时
更快的写入速度，GB/s

15.3 1,973.5

测试中的平均数值
更高的内存带宽，mbps

23400 6400

左右 3.66 更高的带宽

规格

完整的技术规格清单

Corsair CM2X1024-6400C4 1GB

Kingston KHX2933C17S4/8G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 27
读取速度，GB/s

4,967.4 17.8
写入速度，GB/s

1,973.5 15.3
内存带宽，mbps

6400 23400

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-23400, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

776 3366

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT16G4SFRA32A.C8FB 16GB

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Elpida EBJ40UG8EFU0-GN-F 4GB

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Kingston 9965669-027.A00G 16GB

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Samsung M471B5173QH0-YK0 4GB

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Kingston ACR32D4S2S1ME-8 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

G Skill Intl F4-3600C14-8GTRSB 8GB

G Skill Intl F4-3600C14-8GTRSB 8GB

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Samsung M378A5244CB0-CWE 4GB

Samsung M378A5244CB0-CWE 4GB

Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

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Kingston 99U5702-101.A00G 8GB

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Samsung M4 70T2953EZ3-CE6 1GB

Corsair CMD16GX4M4B3200C14 4GB

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TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

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G Skill Intl F4-3200C16-16GSXKB 16GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

G Skill Intl F4-2800C18-8GRS 8GB

G Skill Intl F4-2800C18-8GRS 8GB

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Kingston KF560C40-16 16GB

Micron Technology AFLD44EK2P 4GB

Micron Technology AFLD44EK2P 4GB