Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Samsung M378A5244CB0-CWE 4GB

总分

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

总分

Samsung M378A5244CB0-CWE 4GB

Samsung M378A5244CB0-CWE 4GB

差异规格评论

差异

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

报告一个错误

更快的读取速度，GB/s

2 16.7

测试中的平均数值

Samsung M378A5244CB0-CWE 4GB

需要考虑的原因
Samsung M378A5244CB0-CWE 4GB

报告一个错误

低于PassMark测试中的延时，ns

34 96

左右 -182% 更低的延时
更快的写入速度，GB/s

12.3 1,336.0

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Samsung M378A5244CB0-CWE 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

96 34
读取速度，GB/s

2,725.2 16.7
写入速度，GB/s

1,336.0 12.3
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

438 2584

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378B5273CH0-CH9 4GB

Samsung M393A2G40EB2-CTD 16GB

Samsung M393A2G40EB2-CTD 16GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Avant Technology W641GU48J7240ND 8GB

Avant Technology W641GU48J7240ND 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Samsung M378A5244CB0-CWE 4GB

Samsung M378A5244CB0-CWE 4GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD10240

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Corsair CMK16GX4M2K4266C16 8GB

Corsair CMK16GX4M2K4266C16 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Samsung M471A1G44AB0-CWE 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Crucial Technology BL8G32C16U4B.M8FE 8GB

Crucial Technology BL8G32C16U4B.M8FE 8GB

Kingston KHX2666C13/8GX 8GB

Kingston KHX2666C13/8GX 8GB

Corsair CMK16GX4M2Z3200C16 8GB

Corsair CMK16GX4M2Z3200C16 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Kingston 9905630-051.A00G 16GB

Kingston 9905630-051.A00G 16GB

Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-2666C18-16GRS 16GB

G Skill Intl F4-2666C18-16GRS 16GB

Kingston 9965433-406.A00LF 8GB

Kingston 9965433-406.A00LF 8GB

Micron Technology 8ATF1G64HZ-2G3B1 8GB

Micron Technology 8ATF1G64HZ-2G3B1 8GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Patriot Memory (PDP Systems) 3000 C18 Series 16GB

Patriot Memory (PDP Systems) 3000 C18 Series 16GB

A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Micron Technology 18ASF2G72PDZ-2G3D1 16GB