Corsair CM2X1024-8500C5D 1GB vs Samsung M378A5143EB1-CPB 4GB

总分

Corsair CM2X1024-8500C5D 1GB

Corsair CM2X1024-8500C5D 1GB

总分

Samsung M378A5143EB1-CPB 4GB

Samsung M378A5143EB1-CPB 4GB

差异规格评论

差异

Corsair CM2X1024-8500C5D 1GB

需要考虑的原因
Corsair CM2X1024-8500C5D 1GB

报告一个错误

更快的读取速度，GB/s

4 14.6

测试中的平均数值
更快的写入速度，GB/s

2,034.7 10.8

测试中的平均数值

Samsung M378A5143EB1-CPB 4GB

需要考虑的原因
Samsung M378A5143EB1-CPB 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 48

左右 -26% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Corsair CM2X1024-8500C5D 1GB

Samsung M378A5143EB1-CPB 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

48 38
读取速度，GB/s

4,295.1 14.6
写入速度，GB/s

2,034.7 10.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

650 2298

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CM2X1024-8500C5D 1GB

Corsair CM2X1024-8500C5D 1GB

Samsung M378A5143EB1-CPB 4GB

Samsung M378A5143EB1-CPB 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Kingston 9905713-001.A00G 4GB

Kingston 9905713-001.A00G 4GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

G Skill Intl F4-3600C17-8GTZSW 8GB

G Skill Intl F4-3600C17-8GTZSW 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Mushkin 99[2/7/4]200[F/T] 8GB

Mushkin 99[2/7/4]200[F/T] 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Corsair CMW16GX4M2C3200C16 8GB

Corsair CMW16GX4M2C3200C16 8GB