Corsair CM3X8GA2400C11Y2R 8GB vs G Skill Intl F4-2400C16-8GRS 8GB

总分

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

总分

G Skill Intl F4-2400C16-8GRS 8GB

G Skill Intl F4-2400C16-8GRS 8GB

差异规格评论

差异

Corsair CM3X8GA2400C11Y2R 8GB

需要考虑的原因
Corsair CM3X8GA2400C11Y2R 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 34

左右 41% 更低的延时
更快的读取速度，GB/s

19.1 15.4

测试中的平均数值
更快的写入速度，GB/s

13.1 11.9

测试中的平均数值

G Skill Intl F4-2400C16-8GRS 8GB

需要考虑的原因
G Skill Intl F4-2400C16-8GRS 8GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CM3X8GA2400C11Y2R 8GB

G Skill Intl F4-2400C16-8GRS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

20 34
读取速度，GB/s

19.1 15.4
写入速度，GB/s

13.1 11.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3252 2780

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B2G70BH0-CH9 16GB

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Samsung 9905599-020.A00G 16GB

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Kingston 9905744-005.A00G 16GB

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PNY Electronics PNY 2GB

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TwinMOS 8DHE3MN8-HATP 2GB

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