Corsair CM3X8GA2400C11Y2R 8GB vs Golden Empire CL18-20-20 D4-3000 8GB

总分

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

总分

Golden Empire CL18-20-20 D4-3000 8GB

Golden Empire CL18-20-20 D4-3000 8GB

差异规格评论

差异

Corsair CM3X8GA2400C11Y2R 8GB

需要考虑的原因
Corsair CM3X8GA2400C11Y2R 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 29

左右 31% 更低的延时
更快的读取速度，GB/s

19.1 16.9

测试中的平均数值
更快的写入速度，GB/s

13.1 12.2

测试中的平均数值

Golden Empire CL18-20-20 D4-3000 8GB

需要考虑的原因
Golden Empire CL18-20-20 D4-3000 8GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CM3X8GA2400C11Y2R 8GB

Golden Empire CL18-20-20 D4-3000 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

20 29
读取速度，GB/s

19.1 16.9
写入速度，GB/s

13.1 12.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-17000, 1.2V, CAS Supported: 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3252 3208

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Mushkin 996902 2GB

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Kingston 9905701-008.A00G 16GB

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Micron Technology 8ATF1G64AZ-2G3E1 8GB

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Samsung DDR3 8GB 1600MHz 8GB

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Avant Technology J642GU42J7240NF 16GB

Avant Technology J642GU42J7240NF 16GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB

Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Crucial Technology CT16G4SFS832A.M8FE 16GB

Crucial Technology CT16G4SFS832A.M8FE 16GB