Corsair CM5S16GM4800A40K2 16GB vs Century Micro Inc. CENTURY JAPAN MEMORY 8GB

总分

Corsair CM5S16GM4800A40K2 16GB

Corsair CM5S16GM4800A40K2 16GB

总分

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

差异规格评论

差异

Corsair CM5S16GM4800A40K2 16GB

需要考虑的原因
Corsair CM5S16GM4800A40K2 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 36

左右 33% 更低的延时
更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

需要考虑的原因
Century Micro Inc. CENTURY JAPAN MEMORY 8GB

报告一个错误

更快的读取速度，GB/s

16 13.4

测试中的平均数值
更快的写入速度，GB/s

13.2 12.4

测试中的平均数值

规格

完整的技术规格清单

Corsair CM5S16GM4800A40K2 16GB

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

主要特点

存储器类型

DDR5 DDR4
PassMark中的延时，ns

24 36
读取速度，GB/s

13.4 16.0
写入速度，GB/s

12.4 13.2
内存带宽，mbps

19200 17000

Other

描述

PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

no data / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3436 3313

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Ramos Technology EWB8GB681CA3-16IC 8GB

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A-DATA Technology DDR4 4133 8GB

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Samsung M378B5773DH0-CH9 2GB

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Hewlett-Packard 7EH99AA# 16GB

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A-DATA Technology DDR3 1600 4GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Crucial Technology CT8G4SFS8266.C8FD1 8GB

Crucial Technology CT8G4SFS8266.C8FD1 8GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Teikon TMA851S6AFR6N-UHHC 4GB

Teikon TMA851S6AFR6N-UHHC 4GB

Kingston ACR26D4S9S8HJ-8 8GB

Kingston ACR26D4S9S8HJ-8 8GB

Kingston LV32D4S2S8HD-8 8GB

Kingston LV32D4S2S8HD-8 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

G Skill Intl F4-4800C19-8GTESC 8GB

G Skill Intl F4-4800C19-8GTESC 8GB