Corsair CMD8GX3M2A2933C12 4GB vs Micron Technology 9ASF1G72AZ-2G3B1 8GB

总分

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

总分

Micron Technology 9ASF1G72AZ-2G3B1 8GB

Micron Technology 9ASF1G72AZ-2G3B1 8GB

差异规格评论

差异

Corsair CMD8GX3M2A2933C12 4GB

需要考虑的原因
Corsair CMD8GX3M2A2933C12 4GB

报告一个错误

更快的写入速度，GB/s

9.3 6.8

测试中的平均数值

Micron Technology 9ASF1G72AZ-2G3B1 8GB

需要考虑的原因
Micron Technology 9ASF1G72AZ-2G3B1 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 28

左右 -27% 更低的延时
更快的读取速度，GB/s

15 13.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMD8GX3M2A2933C12 4GB

Micron Technology 9ASF1G72AZ-2G3B1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 22
读取速度，GB/s

13.5 15.0
写入速度，GB/s

9.3 6.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2278 2272

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Micron Technology 8ATF1G64AZ-2G6H1 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Corsair CMSX32GX4M2A2666C18 16GB

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Kingston 9905471-071.A00LF 8GB

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Kingston KHX2400C12D4/8GX 8GB

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Nanya Technology NT2GC64B8HC0NS-CG 2GB

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Crucial Technology BLS16G4D240FSC.16FBD 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M378A5244CB0-CVF 4GB

Samsung M378A5244CB0-CVF 4GB