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Corsair CMD8GX3M2A2933C12 4GB
Panram International Corporation PUD42400C154G2NJK 4GB

Corsair CMD8GX3M2A2933C12 4GB vs Panram International Corporation PUD42400C154G2NJK 4GB

总分
star star star star star
Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

总分
star star star star star
Panram International Corporation PUD42400C154G2NJK 4GB

Panram International Corporation PUD42400C154G2NJK 4GB

差异 规格 评论

差异

Corsair CMD8GX3M2A2933C12 4GB 需要考虑的原因
Corsair CMD8GX3M2A2933C12 4GB
报告一个错误
  • 更快的写入速度，GB/s
    9.3 left arrow 8.3
    测试中的平均数值
Panram International Corporation PUD42400C154G2NJK 4GB 需要考虑的原因
Panram International Corporation PUD42400C154G2NJK 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 28
    左右 -8% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Corsair CMD8GX3M2A2933C12 4GB
Panram International Corporation PUD42400C154G2NJK 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 26
  • 读取速度，GB/s
    13.5 left arrow 13.5
  • 写入速度，GB/s
    9.3 left arrow 8.3
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2278 left arrow 2157

Corsair CMD8GX3M2A2933C12 4GB RAM的比较

Samsung M471B5273DH0-CK0 4GB
Mushkin 992015 (997015) 4GB

Panram International Corporation PUD42400C154G2NJK 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Panram International Corporation PUD42400C154G2NJK 4GB
Panram International Corporation PUD42400C154G2NJK 4GB
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A-DATA Technology AM2L16BC4R1-B0AS 4GB
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Corsair CMR32GX4M4D3200C16 8GB
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Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N
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内存RAM
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内存RAM
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Samsung M393B5170FH0-CH9 4GB
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内存RAM
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