Corsair CMD8GX3M2A2933C12 4GB vs Samsung M378A2G43MB1-CTD 16GB

总分

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

总分

Samsung M378A2G43MB1-CTD 16GB

Samsung M378A2G43MB1-CTD 16GB

差异规格评论

差异

Corsair CMD8GX3M2A2933C12 4GB

需要考虑的原因
Corsair CMD8GX3M2A2933C12 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 43

左右 35% 更低的延时
更快的读取速度，GB/s

13.5 11.6

测试中的平均数值

Samsung M378A2G43MB1-CTD 16GB

需要考虑的原因
Samsung M378A2G43MB1-CTD 16GB

报告一个错误

更快的写入速度，GB/s

11.2 9.3

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Corsair CMD8GX3M2A2933C12 4GB

Samsung M378A2G43MB1-CTD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 43
读取速度，GB/s

13.5 11.6
写入速度，GB/s

9.3 11.2
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2278 2615

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT25664AA800.M16FM 2GB

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Micron Technology 8ATF1G64HZ-2G6E1 8GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

Crucial Technology CT25664AA800.M16FM 2GB

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G Skill Intl F4-3466C16-4GTZ 4GB

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Crucial Technology CT25664AA800.M16FM 2GB

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Kingston KF3600C18D4/32GX 32GB

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Corsair CMD64GX4M8X3800C19 8GB

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Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Corsair CMV16GX4M1A2400C16 16GB

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Kingston 9905678-033.A00G 4GB

Kingston 9905678-033.A00G 4GB