Crucial Technology CT51264BD1339.M16F 4GB vs Kingston 9905702-136.A00G 8GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

Kingston 9905702-136.A00G 8GB

Kingston 9905702-136.A00G 8GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

Kingston 9905702-136.A00G 8GB

需要考虑的原因
Kingston 9905702-136.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 25

左右 -19% 更低的延时
更快的读取速度，GB/s

18 12.1

测试中的平均数值
更快的写入速度，GB/s

13.6 8.6

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

Kingston 9905702-136.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 21
读取速度，GB/s

12.1 18.0
写入速度，GB/s

8.6 13.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2045 3141

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2666C18-32GTZN 32GB

G Skill Intl F4-2666C18-32GTZN 32GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Corsair CMSX32GX4M2A3000C18 16GB

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Crucial Technology CT51264BD1339.M16F 4GB

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A-DATA Technology DQKD1A08 1GB

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Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

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Samsung M3 78T2863QZS-CF7 1GB

Crucial Technology CB8GS2400.C8JT 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Essencore Limited KD48GU880-36A180Z 8GB

Essencore Limited KD48GU880-36A180Z 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Kingston 9965669-031.A00G 16GB

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Samsung M471B5173DB0-YK0 4GB

GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB