Corsair CML8GX3M2A1600C9 4GB vs Micron Technology 4ATF1G64AZ-3G2E1 8GB

总分

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

总分

Micron Technology 4ATF1G64AZ-3G2E1 8GB

Micron Technology 4ATF1G64AZ-3G2E1 8GB

差异规格评论

差异

Corsair CML8GX3M2A1600C9 4GB

需要考虑的原因
Corsair CML8GX3M2A1600C9 4GB

报告一个错误

Micron Technology 4ATF1G64AZ-3G2E1 8GB

需要考虑的原因
Micron Technology 4ATF1G64AZ-3G2E1 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 39

左右 -18% 更低的延时
更快的读取速度，GB/s

16.7 14.6

测试中的平均数值
更快的写入速度，GB/s

10.9 8.8

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Corsair CML8GX3M2A1600C9 4GB

Micron Technology 4ATF1G64AZ-3G2E1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 33
读取速度，GB/s

14.6 16.7
写入速度，GB/s

8.8 10.9
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2355 2876

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3600C17-8GTRG 8GB

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Corsair CML8GX3M2A1600C9 4GB

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Samsung M391B5673EH1-CH9 2GB

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Kingston MSI16D3LS1MNG/8G 8GB

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G Skill Intl F4-3200C14-8GTZR 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

A-DATA Technology DDR4 3333 2OZ 4GB

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Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Crucial Technology CT4G4DFS8213.C8FAD1 4GB

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Kingston KF552C40-16 16GB

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EXCELERAM EKBLACK4163016AD 8GB

EXCELERAM EKBLACK4163016AD 8GB